View IRFU3709PBF_4183008.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 95519A
SMPS MOSFET
Applications
l
IRFU3709PBF
HEXFET(R) Power MOSFET
l l
High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Lead-Free
VDSS
30V
RDS(on) max
9.0m
ID
90A
Benefits
l l l
Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current
I-Pak IRFU3709
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
30 20 90 57 360 120 48 0.96 -55 to + 150
Units
V V A W W mW/C C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Typ.
--- ---
Max.
1.04 110
Units
C/W
Notes through are on page 9
www.irf.com
1
12/06/04
IRFU3709PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 1.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.029 6.9 7.9 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 9.0 VGS = 10V, ID = 15A m 10.5 VGS = 4.5V, ID = 12A 3.0 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V A 100 VDS = 24V, VGS = 0V, TJ = 125C 200 VGS = 16V nA -200 VGS = -16V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 53 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 27 6.7 9.7 22 11 171 21 9.2 2672 1064 109 Max. Units Conditions --- S VDS = 15V, ID = 30A 41 ID = 15A --- nC VDS = 15V --- VGS = 4.5V --- VGS = 0V, VDS = 10V --- VDD = 15V --- ID = 30A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 16V --- = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
382 30
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- 0.88 0.82 48 46 48 52 90 A 360 1.3 --- 72 69 72 78 V ns nC ns nC
VSD trr Qrr trr Qrr
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 30A, VGS = 0V TJ = 125C, IS = 30A, VGS = 0V TJ = 25C, I F = 30A, VR=15V di/dt = 100A/s TJ = 125C, IF = 30A, VR=15V di/dt = 100A/s
2
www.irf.com
IRFU3709PBF
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
1000
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
100
2.7V
2.7V
10
10
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
1000
2.0
I D , Drain-to-Source Current (A)
ID = 90A
TJ = 25 C
1.5
TJ = 150 C
100
1.0
0.5
10 2.0
V DS= 15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRFU3709PBF
4000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
6
ID = 30A
5
V DS= 24V V DS= 15V V DS= 6V
C, Capacitance (pF)
3000
Ciss
2000
4
3
1000
Coss
2
1
0
Crss
1 10 100
0 0 5 10 15 20 25 30
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
ID , Drain Current (A)
100 T = 150 C J
1000 10us 100us 1ms 10 10ms
10
100
TJ = 25 C
1
0.1 0.2
V GS = 0 V
0.8 1.4 2.0 2.6
1
TC = 25 C TJ = 150 C Single Pulse
1 10 100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRFU3709PBF
100
LIMITED BY PACKAGE
VGS
80
V DS
RD
ID , Drain Current (A)
RG VGS
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-VDD
60
40
Fig 10a. Switching Time Test Circuit
20
VDS 90%
0
25
50
75
100
125
150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response(Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFU3709PBF
EAS , Single Pulse Avalanche Energy (mJ)
1200
15V
TOP BOTTOM
1000
VDS
L
DRIVER
ID 13A 19A 30A
800
RG
20V
D.U.T
IAS tp
+ V - DD
A
600
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
400
200
0 25 50 75 100 125 150
Starting TJ , Junction Temperature( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VGS
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRFU3709PBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
www.irf.com
7
IRFU3709PBF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
8
www.irf.com
IRFU3709PBF
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: THIS IS AN IRFU120 WITH AS S EMBLY LOT CODE 5678 AS SEMBLED ON WW 19, 1999 IN T HE AS S EMBLY LINE "A" Note: "P" in as s embly line pos ition indicates "Lead-Free"
INTERNATIONAL RECTIF IER LOGO
PART NUMBER
IRF U120 919A 56 78
AS SEMBLY LOT CODE
DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A
OR
PART NUMBER
IRF U120 56 78
INT ERNATIONAL RECT IF IER LOGO
ASS EMBLY LOT CODE
DAT E CODE P = DESIGNAT ES LEAD-F REE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = ASS EMBLY SITE CODE
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 400s; duty cycle 2%. Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
Starting TJ = 25C, L = 0.85mH
R G = 25, IAS = 30A.
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04
www.irf.com
9

▲Up To Search▲

Price & Availability of IRFU3709PBF

	To Download IRFU3709PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .